PART |
Description |
Maker |
APT50M85B2VFR APT50M85LVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 56A 0.085 Ohm
|
Advanced Power Technolo... Advanced Power Technology
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IRFB260N IRFB260 |
Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.040ohm,身份证\u003d 56A条) HEXFET? Power MOSFET Power MOSFET(Vdss=200V/ Rds(on)max=0.040ohm/ Id=56A)
|
International Rectifier, Corp. IRF[International Rectifier]
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APT20M26WVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 65A 0.026 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
RJE0601JPE-00-J3 RJE0601JPE RJE0601JPE-15 |
Silicon P Channel MOS FET Series Power Switching 40 A, 60 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK(S)-(1), 3 PIN
|
Renesas Electronics Corporation
|
STS5N150 9639 |
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET?/a> POWER MOSFET N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET?/a> POWER MOSFET N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET⑩ POWER MOSFET N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFETPOWER MOSFET N-CHANNEL POWER MOSFET From old datasheet system
|
STMicroelectronics 意法半导 ST Microelectronics
|
APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
STP4N20 6440 |
From old datasheet system N - CHANNEL 200V - 1.3 ohm - 4A TO-220 POWER MOS TRANSISTOR N - CHANNEL 200V - 1.3 - 4A TO-220 POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
APT20M22JVFR |
Aluminum Electrolytic Radial Leaded Low Profile Capacitor; Capacitance: 1000uF; Voltage: 35V; Case Size: 16x25 mm; Packaging: Bulk Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 97A 0.022 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
HUF76129S3S HUF76129P3 FN4395 |
56A/ 30V/ 0.016 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
HUFA75639S3ST |
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
|
Fairchild Semiconductor
|
HUFA75639G3 HUFA75639P3 HUFA75639S3S |
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
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APT20M18LVR APT20M18B2VR |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.018 Ohm
|
Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
|